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Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model

Snowden, CM (1997) Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model IEEE T MICROW THEORY, 45 (1). pp. 58-71.

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A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT's. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and load-pull characterization, and investigate parameter-spreads due to fabrication process variations. An enhanced Newton algorithm is presented for solving the nonlinear system of equations for the model and associated circuit simulator, which allows a faster and more robust solution than contemporary quasi-Newton nonlinear schemes. The model has been applied to the characterization of heterojunction bipolar transistor (HBT) microwave power amplifiers

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Snowden, CM
Date : January 1997
DOI : 10.1109/22.552033
Additional Information : © 1997 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 17 May 2012 13:29
Last Modified : 31 Oct 2017 14:36

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