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Recombination and loss mechanisms in GaNAsP/GaP QW lasers

Hossain, N, Chamings, J, Jin, SR, Sweeney, SJ, Liebich, S, Reinhard, S, Volz, K, Kunert, B and Stolz, W (2010) Recombination and loss mechanisms in GaNAsP/GaP QW lasers In: PGC 2010, 2010-12-14 - 2010-12-16, Orchard, Singapore.

Recombination and loss mechanisms in GaNAsP-GaP QW lasers.pdf
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In this paper the authors present a comprehensive study of the threshold current and its temperature dependence in novel direct band-gap Ga(NAsP)/GaP QW lasers which provide a potential route to lattice matched monolithic integration of long term stable semiconductor lasers on silicon. It is found that near room temperature, the threshold current is dominated by nonradiative recombination accounting for ~87% of the total threshold current density. A strong increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
Hossain, N
Chamings, J
Jin, SR
Sweeney, SJ
Liebich, S
Reinhard, S
Volz, K
Kunert, B
Stolz, W
Date : 2010
DOI : 10.1109/PGC.2010.5706060
Additional Information : © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 20 Dec 2012 10:09
Last Modified : 31 Oct 2017 14:49

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