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Fast physical models for Si LDMOS power transistor characterization

Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J and Snowden, CM (2011) Fast physical models for Si LDMOS power transistor characterization IEEE MTT-S International Microwave Symposium Digest. p. 1.

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A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Everett, JP
Kearney, MJ
Rueda, HA
Johnson, EM
Aaen, PH
Wood, J
Snowden, CM
Date : 2011
DOI : 10.1109/MWSYM.2011.5973484
Depositing User : Symplectic Elements
Date Deposited : 17 Nov 2011 11:37
Last Modified : 31 Oct 2017 14:14

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