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Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Bennett, NS, Cowern, NEB, Kheyrandish, H, Paul, S, Lerch, W, Smith, AJ, Gwilliam, R and Sealy, BJ (2008) Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon In: ESSDERC 2008, 2008-09-15 - 2008-09-19, Edinburgh, UK.

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Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 1021cm-3 can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering technique is not reliant on the implementation of SOI-based CMOS but is also directly applicable to bulk silicon technologies.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Bennett, NS
Cowern, NEB
Kheyrandish, H
Paul, S
Lerch, W
Sealy, BJ
Date : 2008
DOI : 10.1109/ESSDERC.2008.4681755
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:14
Last Modified : 23 Jan 2020 16:37

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