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Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions

Kozanecki, A, Jeynes, C, Sealy, BJ and Nejim, A (1998) Ion beam analysis of 6H SiC implanted with erbium and ytterbium ions In: 13th International Conference on Ion Beam Analysis (IBA-13), 1997-07-27 - 1997-08-01, LISBON, PORTUGAL.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Surrey research (other units)
Authors :
Kozanecki, A
Sealy, BJ
Nejim, A
Date : 1 March 1998
DOI : 10.1016/S0168-583X(97)00828-8
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, ATOMIC, MOLECULAR & CHEMICAL, PHYSICS, NUCLEAR, ion implantation, SiC, damage annealing, recrystallization, erbium, ytterbium, SILICON-CARBIDE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:31
Last Modified : 23 Jan 2020 16:57

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