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Improvements in Pt-based Schottky contacts to 3C-SiC

Constantinidis, G, Pecz, B, Tsagaraki, K, Kayambaki, M and Michelakis, K (1999) Improvements in Pt-based Schottky contacts to 3C-SiC Materials Science and Engineering B, 61-62. pp. 406-410.

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Despite its structural shortcomings (stacking faults, twins and threading dislocations), 3C-SiC heteroepitaxially grown on Si still has potential for high temperature sensor applications for which stable electrical contacts are of extreme importance. Pt/Si multilayered metallisations were compared to conventional Pt ones in order to investigate the effect of excess Si to the metal/SiC interface and the possible improvements in the thermal stability. These contacts were annealed up to 750°C. Their electrical behaviour was analysed by I-V measurements while the interface between the metal system and the 3C-SiC surface was examined by transmission electron microscopy (TEM) and the formed phases were determined by X-ray diffraction (XRD). © 1999 Elsevier Science S.A.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Constantinidis, G
Pecz, B
Tsagaraki, K
Kayambaki, M
Date : 30 July 1999
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:32
Last Modified : 24 Jan 2020 22:25

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