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Arsenic plasma doping in Si characterized by high resolution medium energy ion scattering depth profile analysis

Van den Berg, JA, Rossall, AK and England, J (2019) Arsenic plasma doping in Si characterized by high resolution medium energy ion scattering depth profile analysis In: 22nd International Conference on Ion Implantation Technology, 16 - 21 September 2018, Wurzburg, Germany.

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In the plasma doping (PLAD) process studied, Si(100) wafers were exposed to an As containing plasma and pulse biased to between 4 and 10 kV to ion fluences of 1x1016 cm-2. Medium energy ion scattering (MEIS) analysis was applied after i) the PLAD implant, ii) two types of wet chemical clean and iii) spike annealing to 1000ºC, to determine quantitative depth profiles of As, Si and O and retained As dose at each stage. Following PLAD at a 7 kV bias, MEIS showed the formation of an intermixed Si/As layer which decayed almost linearly from a ~40% As fraction directly under a 1.2 nm thick surface oxide to near-zero over a depth of ~17 nm. A non-oxidizing wet clean is shown to etch away 7 nm of the mixed layer, stopping at a Si concentration of 4x1022 cm3 and remove around 80% of the implanted As. Concentration depth profiles of As visible to the beam in both random and aligned lattice directions, yielded the substitutional As profile and retained As dose of 8x1014 cm-2. This dose is shown to be strongly bias voltage (implant energy) dependent, giving a ~10-fold increase going from 4 to 10 kV. The application of an industry standard SPM wet clean on the other hand, produced a 13.5 nm thick surface oxide overlaying the retained As implant and, after annealing a substitutional As depth profile with a concentration of 1x1021 cm-3 over a depth greater than 10 nm. This gives a substitutional As dose of 1.35x1015 cm-2 which represents a 70 % increase on that measured after a non-oxydizing chemical wet clean.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Van den Berg, JA
Rossall, AK
Date : 22 August 2019
DOI : 10.1109/IIT.2018.8807964
Copyright Disclaimer : © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords : As plasma doping and processing, medium energy ion scattering analysis, depth profiles and substitutional As dose
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Depositing User : Users 8 not found.
Date Deposited : 06 Dec 2018 12:42
Last Modified : 24 Feb 2020 13:44

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